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Bi-directional High-speed LVDS IO with LVCMOS input

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Silicon Creations
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IP Name
LVDS Rx/Tx with LVCMOS - TSMC 65nm
Provider

Silicon Creations

Description

Bi-directional High-speed LVDS IO with LVCMOS input

Categories
Portability
ASIC, Structured
Process Node
65nm/TSMC/GP
Type
Hard IP
Maturity
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Overview
Hi-speed Bi-directional LVDS IO with LVCMOS
Features
  • Complies with TIA/EIA-644-A-2001 LVDS standard
  • Input/output up to 2Gbps (1000MHz)
  • Trimmable/switchable 100 ohm on-die termination resistor allows low power at low frequency and clean high frequency signals
  • LVCMOS input function with hysteresis
  • Low area – 120u X 300u
  • Designed to work with standard ANIO pads and power supply padcells
  • Uses external bandgap for Tx biasing
Deliverables
  • GDSII
  • Calibre LVS Netlist
  • Behavioral Verilog Model with true loop dynamics and jitter
  • LEF Footprint, LIBERTY Timing Models
  • Detailed Application Note
Market Category
Automotive, Communications, Consumer Electronics, Data Processing, Industrial and Medical, Military/Civil Aerospace, Others
Datasheet
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Size
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QIP Rating  This IP is not yet QIP rated.
 
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Keywords
Node
28nm      40 nm      55 nm      90 nm      150 nm      250 nm     
32nm      45 nm      65 nm      130 nm      180 nm      350 nm     
Foundry
Common Platform
GLOBALFOUNDRIES
IBM
SilTerra
SMIC
TSMC
Tower
UMC
X-FAB
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Category
Vendor
Portability
ASIC FPGA Structured
IP Quality
QIP Rated

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