DDR3/2 1.8V gate oxide PHY - TSMC 40nm G CLN40G
DDR3/2 1.8V gate oxide PHY - TSMC 40nm G CLN40G
Overview:

The ARM® Artisan® DDR3/2 Physical Memory Interface (PHY) is a drop-in hard macro which minimizes die size, speeds time-to-market, and reduces risk. The hard macro is implemented as a flexible pad ring configuration, enabling optimal pad ring placement and die area optimization. The 1066Mbps DDR2 or 1600Mbps capable DDR3 interface reduces design time with its JEDEC-compliant DDR signaling and industry standard DFI interface, enabling seamless integration with DDR memory controllers and SDRAM chips. The DDR3/2 Physical Interface is designed with a robust ESD architecture and PVT compensation. The Artisan DDR3/2 PHY maintains high signal integrity, low jitter, and superior noise rejection in a complete silicon-proven design, providing SoC designers with a flexible, low risk, drop-in DDR PHY solution.

Features

DDR3 or DDR2 modes & signaling rates up to 1600Mbps and 1066Mbps, respectively
x32 or x16 data path interface
PVT compensation and timing calibration
At speed BIST, scan insertion & Loopback test
Dynamic read detection and training
Various power-down modes
Low jitter with superior noise rejection
Read and write leveling up to 500ps skew delta (pt-to-pt 5 DRAM bus)
o Implemented using 0.9V RVT core devices and 1.8V gate oxide IO devices
Supports both wire-bond and flip-chip packaging

Details

Category

Portability

Process Node

Type

Maturity

Market Category

QIP Rating

IP Catalog : Off-Chip Interface IP : Embedded I/O Cores : PHY

ASIC, FPGA

40nm/TSMC/CLN40G

Hard IP

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Communications Consumer Electronics Data Processing Industrial and Medical Military/Civil Aerospace

This IP is not yet QIP rated.

Vendor

ARM is the industry's leading provider of 16/32-bit embedded RISC microprocessor solutions. The

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