Three Critical Days, Three Design Pavilions, Three Industry Luminaries The Value of ARM® techcon3 Continues to Multiply San Clemente, CA - Formerly known as ARM Developers’ Conference, the 2009 ARM® techcon³ is expanding its focus to three important areas of design which include Energy Efficiency, Internet Everywhere and MCU & Tools. The event will be held October 21-23, 2009 at the Santa Clara Convention Center.
Keeping in line with the event’s theme, Design to the Power of Three, ARM techcon³ features a Technic...
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Dolphin Integration’s Audio converter Helium lightens both Power consumption and Bill-of-Material Meylan, France. June 29, 2009. Low power consumption has become a hot selling argument for SoCs targeting nomad audio applications. Class D amplifiers have demonstrated their superior power efficiency for driving loud-speakers. Since Class AB amplifiers were so far unpopular due to
their low power efficiency, diverse new types of amplifiers have appeared for driving earphones and headphones, suc...
Closing the ESL gap EDN GUEST OPINION: Plenty of commentary has been written about the promise of ESL and how it remains unfulfilled. The truth is that engineers have been successfully designing with ESL tools for years.
Accellera, Spirit Consortium merger hints at future of ESL design EDN The merger aims to bridge the language-based design and IP-assembly worlds and will exploit the fact that the two organizations have been working in complementary areas of front-end design and verification.
A modest proposal for IP EDN The US patent system needs fixing to the point that there are debates over just whose interests we should fix first.
Troubleshooting a transaction-level model EDN Seemingly minor violations of the TLM 2.0 standard can turn a system-level model into an agent of evil in your design flow.
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EUV prints critical layers for 22-nm SRAM EDN IMEC (Interuniversity Microelectronics Center) reports having used ASML's EUV (extreme-ultraviolet) Alpha lithography tool to print the contact and metal patterns for a 22-nm-node SRAM cell'apparently, the first application of the tool for multiple layers at this density. The SRAM cell is both tiny'at 0.
Selecting the correct process geometry and options EDN Most of the custom chips today, including ASICs, ASSPs (application-specific standard products), and special-purpose custom chips, have function blocks that do not require leading-edge processes.
RFIDs power themselves EDN The IC Insider takes a look at the charge pump of Alien Technology's Alien Higgs RFID.
Innovating out of the downturn EDN If history is any indicator, innovation, not the business cycle, will pull the semiconductor industry out of recession. But this time young, innovative companies jumping on advanced processes may play a disproportionate role.
Power fortunes: Estimating power in FPGA designs EDN As FPGAs enter new applications, designers must estimate power consumption early, closely watch it, and then attempt to measure the results.
