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eMemory

eMemory semiconductor IP catalog
8F, No. 5, Tai-Yuan 1st St.
Jhubei City, Hsinchu County 30265
Taiwan, R.O.C.
Customer Testimonial

"We are very pleased that with the advantage of TSMC’s 80nm high-voltage technology, eMemory can help customers create fully integrated smartphone HD display driver ICs with high reliability. The result is another successful example of how TSMC’s Open Innovation Platform helps our IP partners maximize innovation for their customers."

Suk Lee, Director of Design Infrastructure Marketing
TSMC

Founded in August of 2000, eMemory Technology Inc. provides a wide range of logic compatible non-volatile memory (NVM) IP and technology development services based on over 250 patents.

eMemory's core technologies - NeoBit and NeoFlash, are widely built on more than 120 process nodes at various Foundries and IDMs from 0.7 um to 65 nm generations. They feature superb structure robustness, high manufacturing yield, and easy design integration leading to fast time to volume. The derivative processes include Mixed Signal, Radio Frequency (RF), High Voltage (HV), BCD, SiGe and Low Power.

NeoBit is a programmable logic device aiming for embedded one-time programmable (OTP)/ multi-time programmable (MTP) applications. It utilizes hot electron injection for programming, while erasure can be achieved through UV exposure.

NeoFlash is the ultimate solution aiming for embedded MTP/ Flash applications. It utilizes advanced single poly Flash structure, and requires only 3 additional non-critical masks to be embedded into CMOS logic processes.

To date, eMemory has reached the record of 2.8M+ production wafers, over 1,400 customers' product tape-outs, and more than 400 products are in production. eMemory provides quick turnaround time and dedicated customized engineering services to help our customers create their differentiations and unique market position.

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eMemory IP Catalog
335 matches found rss
IP Vendor IP Name Description
eMemory EC00001GCL2 Embedded Charge Pump IP for 1.8V/3.3V G
eMemory EC00001GCL2_IC Embedded Charge Pump IP for 1.8V/3.3V G
eMemory EC00001GCL2_M3 Embedded Charge Pump IP for 1.8V/3.3V G
eMemory EC00001PWLK Embedded Charge Pump IP for 1.8V/3.3V G
eMemory EC00008ACT2Q Embedded Charge Pump IP for 1.8V/6V/16V HV
eMemory EF0032K8HA160DQ01 Embedded Flash IP, 32Kx8 bits for 1.8V/5V/32V HV
eMemory EF0256K8HA180GM02 Embedded Flash IP, 256Kx8 bits for 1.8V/3.3V Logic
eMemory EF064K8CCS2 Embedded Flash IP, 64Kx8 bits for 1.8V/3.3V IB
eMemory EM0004X8GA250GE01 Embedded MTP (Multi-Time Programmable) IP, 4x8 bits for 2.5V/5V G
eMemory EM001X32GA160DQ01 Embedded MTP (Multi-Time Programmable) IP, 1x32 bits for 1.8V/5V/32V HV
eMemory EM001X8GCQB_M3H3OM Embedded MTP (Multi-Time Programmable) IP, 1x8 bits for 1.8V/5V/30V HV
eMemory EM004X8GBT1 Embedded MTP (Multi-Time Programmable) IP, 4x8 bits for 2.5V/5V G
eMemory EM004X8GBT1 Embedded MTP (Multi-Time Programmable) IP, 4x8 bits for 2.5V/5V/20V HV
eMemory EM004X8GBT1 Embedded MTP (Multi-Time Programmable) IP, 4x8 bits for 2.5V/5V/40V BCD
eMemory EM004X8KBL1 Embedded MTP (Multi-Time Programmable) IP, 4x8 bits for 2.5V/3.3V/20V HV
eMemory EM004X8KBL1 Embedded MTP (Multi-Time Programmable) IP, 4x8 bits for 2.5V/3.3V/20V HV
eMemory EM004X8KBL1 Embedded MTP (Multi-Time Programmable) IP, 4x8 bits for 2.5V/3.3V/20V HV
eMemory EM004X8KBL1 Embedded MTP (Multi-Time Programmable) IP, 4x8 bits for 2.5V/3.3V G
eMemory EM008X8KBB9 Embedded MTP (Multi-Time Programmable) IP, 8x8 bits for 2.5V/5V/36V BCD
eMemory EM008X8KBB9 Embedded MTP (Multi-Time Programmable) IP, 8x8 bits for 2.5V/5V/36V BCD
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