Semiconductor IP News and Trends Blog
Tag Archives: IEDM
January 14, 2015 - By John Blyler
The recent IEEE technical conference provided a detailed look at research into leading semiconductor and nanotechnology devices across many domains. Continue reading
January 9, 2013 - By John Blyler
At IEDM, Globalfoundries explained why its 14-nm-class Fin with a 20-nm back-end combination would increase planar IP portability to non-planar FinFETs. Continue reading
December 18, 2012 - By John Blyler
Why is one of Europe’s leading semiconductor IDMs pushing into leading-edge, 28-nm FD-SOI technology while leaving a market were such technology might be useful? Continue reading
